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探测器以热电冷却的Si-Pin光电二极管作为X射线探测元器件，根据不同探测器类型和峰化时间，55Fe的5.9KeV峰值分辨率可达145eV; FAST SDD 探测器峰值分辨率更可达122eV。
XR-100系列 探测器型号 | 探测器材料 | 探测器面积 | 探测器厚度 | 铍(Be)窗 厚度 | 备注 |
XY-FSG32MD-G3SP | Si-PIN | 6 mm2 | 500 μm | 1 mil | 有内置准直器 |
XY-FS432MD-G3SP | Si-PIN | 13mm2 | 500 μm | 1 mil | 有内置准直器 |
XY-FSJ32MD-G3SP | Si-PIN | 25mm2 | 500 μm | 1 mil | 有内置准直器 |
XY-FSG32MD-G2SP | Si-PIN | 6mm2 | 500 μm | 0.5mil | 有内置准直器 |
XY-GSH3AMD-G2SP | SDD | 25mm2 | 500 μm | 0.5mil | 有内置准直器 |
XY-GSH3AMD-E1SP | SDD | 25mm2 | 500 μm | 0.3mil | 有内置准直器 |
XY-GSH3AMD-UOEA | SDD | 25mm2 | 500 μm | C1 Window | 有内置准直器 |
XY-GSH3AMD-E6EA | SDD | 25mm2 | 500 μm | C2 Window | 有内置准直器 |
XY-HSH3AMD-G2S | FAST SDD | 25mm2 | 500 μm | 0.5mil | 有内置准直器 |
XY-HSH3AMD-G1S | FAST SDD | 25mm2 | 500 μm | 0.3mil | 有内置准直器 |
XY-HSH3AMD-U0EA | FAST SDD | 25mm2 | 500 μm | C1 Window | 有内置准直器 |
XY-HSH3AMD-E6EA | FAST SDD | 25mm2 | 500 μm | C2 Window | 有内置准直器 |
** Silicon Drift Detector (SDD) uses a junction gate field-effect transistor (JFET) inside the hermetically sealed TO-8 package, along with an external preamplifier. FAST SDD uses a complementary metal-oxide-semiconductor () preamplifier inside the TO-8 package, and replaces the JFET with a metal-oxide-semiconductor field-effect transistor (MOSFET).
