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硫化镓晶体 GaS(Gallium Sulfide)
晶体尺寸：~10毫米
电学性能：半导体
晶体结构：六边形
晶胞参数：a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14

Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.